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 EGF1A - EGF1D
EGF1A - EGF1D
Features * * *
Low forward voltage drop. Low profile package. Fast switching for high efficiency.
SMA/DO-214AC
COLOR BAND DENOTES CATHODE
Fast Rectifiers (Glass Passivated)
Absolute Maximum Ratings*
Symbol
VRRM IF(AV) IFSM Tstg TJ
TA = 25C unless otherwise noted
Parameter
Maximum Repetitive Reverse Voltage Average Rectified Forward Current, @ TL = 100C Non-repetitive Peak Forward Surge Current 8.3 ms Single Half-Sine-Wave Storage Temperature Range Operating Junction Temperature
Value
1A 50 1B 100 1.0 30 -65 to +175 -65 to +175 1C 150 1D 200
Units
V A A C C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
PD RJA RJL Power Dissipation Thermal Resistance, Junction to Ambient* Thermal Resistance, Junction to Lead*
Parameter
Value
2.0 85 30
Units
W C/W C/W
*Device mounted on FR-4 PCB 0.013 mm.
Electrical Characteristics
Symbol
VF trr IR CT
TA = 25C unless otherwise noted
Parameter
1A Forward Voltage @ 1.0 A Reverse Recovery Time IF = 0.5 A, IR = 1.0 A, IRR = 0.25 A Reverse Current @ rated VR TA = 25C TA = 100C Total Capacitance VR = 4.0 V, f = 1.0 MHz
Device
1B 1.0 50 10 100 15 1C 1D
Units
V ns A A pF
2001 Fairchild Semiconductor Corporation
EGF1A-EGF1D, Rev. D
EGF1A - EGF1D
Typical Characteristics
Average Rectified Forward Current, IF [A] 1.6 1.4
100
TJ = 25 C A Pulse Width = 300S 2% Duty Cycle
Forward Current, IF [A]
150 175
1.2 1 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 Lead Temperature [C]
RESISTIVE OR INDUCTIVE LOAD P.C.B. MOUNTED ON 0.2 x 0.2" (5.0 x 5.0 mm) COPPER PAD AREAS
10
1
0.1
0.01 0.2
0.4
0.6 0.8 1 1.2 Forward Voltage, VF [V]
1.4
1.6
Figure 1. Forward Current Derating Curve
Peak Forward Surge Current, IFSM [A] 40
Figure 2. Forward Voltage Characteristics
1000
T A = 100 C
20
Reverse Current, IR [mA]
30
100
10
T J = 25 C A
10
1
0
1
2
5 10 20 Number of Cycles at 60Hz
50
100
0.1
0
20 40 60 80 100 120 140 Percent of Rated Peak Reverse Voltage [%]
Figure 3. Non-Repetitive Surge Current
60 Total Capacitance, CT [pF] 50 40 30 20 10 0 0.1
Figure 4. Reverse Current vs Reverse Voltage
0.5 1 2 5 10 20 50 100 Reverse Voltage, V R [V]
500
Figure 5. Total Capacitance
50 NONINDUCTIVE 50 NONINDUCTIVE
+0.5A
(-)
trr
DUT
50V (approx)
50 NONINDUCTIVE
Pulse Generator (Note 2) (+)
OSCILLOSCOPE (Note 1)
0 -0.25A
NOTES: 1. Rise time = 7.0 ns max; Input impedance = 1.0 megaohm 22 pf. 2. Rise time = 10 ns max; Source impedance = 50 ohms.
-1.0A
1.0cm SET TIME BASE FOR 5/ 10 ns/ cm
Reverse Recovery Time Characterstic and Test Circuit Diagram
2001 Fairchild Semiconductor Corporation EGF1A-EGF1D, Rev. D
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
DISCLAIMER
FAST (R) FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM
OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench (R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER (R)
SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET (R)
VCXTM
STAR*POWER is used under license
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. H4


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